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| SLA5055 Absolute maximum ratings Symbol VDSS VGSS ID ID (pulse)* PT 5 10 FET 1 150 N-channel General purpose External dimensions A (Ta=25C) *** SLA Ratings FET 2 +20, -10 7 15 Unit V V A A W W C/W C/W Vrms C C 5 (Ta=25C, with all circuits operating, without heatsink) 35 (Tc=25C, with all circuits operating, with infinite heatsink) j-a j-c VISO Tch Tstg * PW100s, duty50% 25 (Junction-Air, Ta=25C, with all circuits operating) 3.57 (Junction-Case, Tc=25C, with all circuits operating) 1000 (Between fin and lead pin, AC) 150 -40 to +150 sEquivalent circuit diagram 3 FET-1 2 FET-2 4 5 FET-2 6 7 FET-2 8 9 11 FET-2 10 1 12 Characteristic curves ID-VDS Characteristics (Typical) FET 1 5 10V ID-VGS Characteristics (Typical) FET 2 7 10V 4V FET 1 5 (VDS=10V) 4 4V 6 5 4 2.8V ID (A) 4 3 2.6V 2 ID (A) ID (A) 3 2.8V 3 2.6V 2 1 2.4V 2.4V 1 1 VGS=2.2V VGS=2.2V 0 0 2 4 6 8 10 0 0 2 4 6 8 10 0 0 1 2 3 4 VDS (V) VDS (V) VGS (V) RDS(ON)-ID Characteristics (Typical) FET 1 500 FET 2 200 4V VGS=10V 4V FET 2 5 125 C 25 C -40C 2 Tc= (VDS=10V) 400 VGS=10V 4 150 (m) (m) (ON) 100 RDS ID (A) 300 3 (ON) RDS 200 2 100 1 125 25 C C 50 0 0 1 2 3 4 5 0 0 1 2 3 4 5 6 7 0 0 1 2 3 4 ID (A) ID (A) VGS (V) RDS(ON)-TC Characteristics (Typical) FET 1 1.0 (ID=2.5A) 500 FET 2 (ID=3.5A) 400 (m) () 4V 300 4V VG S= (ON) 0.5 VG S= 1 0V RDS RDS (ON) 10 V 200 100 0 -40 0 50 100 150 0 -40 0 50 100 150 TC (C) TC (C) -40C Tc= SLA5055 Electrical characteristics FET 1 Symbol min V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss Crss td (on) tr td (off) tf VSD trr 1.0 3 5.5 330 370 380 95 25 25 50 55 40 1.1 180 1.5 440 480 150 100 100 2.0 Specification typ max Unit V nA Conditions ID=100A, VGS=0V VGS=20V VDS=150V, VGS=0V VDS=10V, ID=250A VDS=10V, ID=2.5A VGS=10V, ID=2.5A VGS=4V, ID=2.5A VDS=10V f=1.0MHz VGS=0V ID=2.5A VDD 70V RL=28W VGS=5V ISD=5A, VGS=0V IF=100mA 1.0 4 9 150 170 870 320 210 25 55 80 50 1.0 500 1.5 200 230 Specification min 150 100 100 2.0 typ max FET 2 Unit V nA Conditions ID=100A, VGS=0V VGS=20V VDS=150V, VGS=0V VDS=10V, ID=250A VDS=10V, ID=3.5A VGS=10V, ID=3.5A VGS=4V, ID=3.5A VDS=10V f=1.0MHz VGS=0V ID=3.5A VDD 70V RL=20 VGS=5V ISD=7A, VGS=0V IF=100mA (Ta=25C) A V S m m pF pF pF ns ns ns ns V ns A V S m m pF pF pF ns ns ns ns V ns Characteristic curves Re(yfs)-ID Characteristics (Typical) FET 1 10 Safe Operating Area (SOA) FET 2 20 (VDS=10V) (VDS=10V) FET 1 20 10 ID (pulse) MAX (TC=25C) 10 5 10 5 = TC C 0 -4 1 25 C (o S n I )L M IT Re (yfs) (S) Re (yfs) (S) TC 4 =- 0 C 5 12 C ED 0 s 10 1m m s (1 sh s ID (A) 5 25C 1 0.5 RD ot ) 25C 1 1 0.1 1-circuit operation 0.05 0.5 0.3 0.05 0.5 0.3 0.05 0.01 0.5 1 5 10 50 100 200 0.1 0.5 1 5 0.1 0.5 1 5 7 ID (A) ID (A) VDS (V) Capacitance-VDS Characteristics (Typical) FET 1 1000 VGS=0V f=1MHz FET 2 5000 VGS=0V f=1MHz 20 10 FET 2 (TC=25C) 10 ID (pulse) MAX 0 500 Ciss s 5 1m 10 m s (1 sh s Capacitance (pF) Capacitance (pF) 1000 RDS (on) LIMITED 100 Coss 500 ID (A) Ciss ot ) 0.5 50 0.1 100 Crss Coss Crss 1-circuit operation 0.05 10 50 40 0 10 20 30 40 50 0 10 20 30 40 50 0.01 0.5 1 5 10 50 100 200 VDS (V) VDS (V) VDS (V) IDR-VSD Characteristics (Typical) FET 1 5 PT-Ta Characteristics FET 2 7 6 40 35 30 25 20 15 W With Silicone Grease Natural Cooling All Circuits Operating 4 5 PT (W) IDR (A) IDR (A) 3 ith 4 10 V 4V ite fin In H t ea 2 10 3 2 V si nk 4V VGS=0V VGS=0V 10 Without Heatsink 1 1 0 0 0.5 1.0 1.5 5 0 0 0 0.5 1.0 1.5 0 50 100 150 VSD (V) VSD (V) Ta (C) |
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